Semiconductor Wafer Cleaner, Ultrasonic Alkaline Cleaning + Ultrasonic Acidic Cleaning + Pure Water Rinsing
Core technical advantages
I. Three-tank gradient cleaning system
1. Ultrasonic alkaline cleaning tank (pH 10-13)
Technical parameters:
▶ Frequency: 80kHz/120kHz Dual-frequency switching (support pulsed ultrasound) ▶ Tank material: modified PTFE liner + 316L stainless steel frame (130℃ high temperature resistance, NaOH / ammonia corrosion resistance)
▶ Cleaning medium: alkaline solution such as potassium hydroxide (KOH), tetramethylammonium hydroxide (TMAH), etc.
Core Functions: ✔ Efficient stripping of photoresist residue: destroying the molecular bond of the adhesive film through cavitation effect, together with 50-80℃ constant temperature control, removing 99.9% of SU-8 / positive photoresist within 15 minutes
✔ Particle contaminant capture: built-in micron-sized PP cartridge (5μm) + Magnetic Filter (capturing Fe/Co and other metal particles). ✔ Real-time filtration of cleaning waste
2. Ultrasonic Acid Cleaning Tank (pH 1-3)
Technical Parameters:
▶ Frequency: 150kHz high-frequency ultrasonication (reduces the size of cavitation bubbles to minimize wafer surface damage)
▶ Tank Material: Perfluoroalkoxy Resin (PFA) liner (HF-resistant). PFA) liner (resistant to HF/HNO₃ mixed acid)
▶ Cleaning medium: BOE buffer oxide etchant (HF:NH₄F=1:6), aqua regia (HNO₃:HCl=1:3)
Core functions:
✔ Depth of metal ion removal ✔ Surface roughness control: for Al/Cu electrode residue, through acid etching + ultrasonic vibration, make Na⁺/K⁺ residue <10¹⁰ atoms/cm²
✔ Surface roughness control: ultrasonic power dynamically adjusted (50-300W), together with the precision of temperature control ±0.5 ℃, to ensure that the wafer Surface Ra value ≤ 0.2nm
3. Pure water megasonic rinsing tank (resistivity ≥ 18.2MΩ・cm)
Technical Parameters:
▶ Frequency: 850kHz MF ultrasound (cavitation threshold > 200μm, to avoid liquid impact damage)
▶ Water quality Monitoring: online TOC detector (detection accuracy ≤ 5ppb) + particle counter (0.1μm particle size detection)
▶ Rinsing method: countercurrent rinsing (pure water utilization rate increased to 85%) + megasonic cavitation (stripping submicron particles)
Core features:
✔ Residue-free cleanliness: Adopt DI water three-stage filtration (activated carbon + RO membrane + polishing resin), with overflow rate of 50L/min, to realize TOC residual <10ppb within 10 minutes
✔ Edge-enhanced cleaning: patented rotating spray arm (speed 0-300rpm adjustable), to solve the cleaning blind spot of 1mm area at the edge of the wafer.
Contact us today for the Semiconductor Wafer Cleaning Process White Paper and exclusive quote program!
